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 T2N4401
Low Power Bipolar Transistors
Features:
* NPN Silicon Planar Epitaxial Transistors. * General purpose Switching Applications.
TO-92 Plastic Package
Dimensions A B C D E F G H K L
Minimum 4.32 4.45 3.18 0.41 0.35 5 1.14 12.70 1.982
Maximum 5.33 5.20 4.19 0.55 0.50
1.40 1.53 2.082
Dimensions : Millimetres
Pin Configuration 1 = Emitter 2 = Base 3 = Collector
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10/04/06 V1.0
T2N4401
Low Power Bipolar Transistors
Absolute Maximum Ratings
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation at Ta = 25C Derate above 25C Power Dissipation at TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Thermal Resistance Junction to Case Junction to Ambient Rth Rth
(j-c) (j-a)
Symbol VCEO VCBO VEBO IC
T2N4401 40 60 6 600 625 5.0 1.5 12 -55 to +150
Unit
V
mA mW mW/C W W/C C
PD
Tj, Tstg
83.3 C/W 200
Electrical Characteristics (Ta = 25C unless otherwise specified)
Characteristic Collector Emitter Voltage IC = 1mA, IB = 0 Collector Base Voltage IC = 100A, IE = 0 Emitter Base Voltage IE = 100A, IC = 0 Base Cut off Current VCE = 35V, VEB = 0.4V Collector Cut off Current VCE = 35V, VEB = 0.4V Collector Emitter Saturation Voltage IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Base Emitter Saturation Voltage IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA *Pulse Test : Pulse Width: 300s, Duty 2.0% Symbol BVCEO* BVCBO BVEBO IBEV <0.1 ICEX <0.4 <0.75 V VBE (Sat)* 0.75 - 0.95 <1.2 A T2N4401 >40 >60 >6 V Unit
VCE (Sat)*
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10/04/06 V1.0
T2N4401
Low Power Bipolar Transistors
Electrical Characteristics (Ta = 25C unless otherwise specified)
Characteristic DC Current Gain IC = 0.1mA, VCE = 1V IC = 1mA, VCE = 1V IC = 10mA, VCE = 1V IC = 150mA, VCE = 1V* IC = 500mA, VCE = 2V* Dynamic Characteristics Small Signal Current Gain IC = 1mA, VCE = 10V, f = 1KHz Input Impedance IC = 1mA, VCE = 10V, f = 1KHz Characteristic Voltage Feedback Ratio IC = 1mA, VCE = 10V, f = 1KHz Output Impedance IC = 1mA, VCE = 10V, f = 1KHz Collector-Base Capacitance VCB = 5V, IE = 0, f = 100KHz VCB = 10V, IE = 0, f = 140KHz Emitter-Base Capacitance VEB = 0.5V, IC = 0, f = 100kHz Transition Frequency IC = 20mA, VCE = 10V, f = 100MHz Switching Characteristics VCC = 30V, VEB = 2V IC = 150mA, IB1 = 15mA Delay Time Rise Time VCC = 30V, IC = 150mA IB1 = IB2 = 15mA Storage time Fall Time *Pulse Test : Pulse Width: 300s, Duty 2.0% ts tf <225 <30 ns td tr <15 <20 ns hfe hie Symbol hre hoe 40 - 500 1.0 - 15 2N4401 0.1 - 8.0 1.0 - 30 <6.5 pF Ceb <30 k Unit x10-4 Symbol T2N4401 Unit
hFE
>20 >40 >80 100 - 300 >40
-
Ccb
fT
>250
MHz
Page 3
10/04/06 V1.0
T2N4401
Low Power Bipolar Transistors
DC Current Gain hFE, DC Current Gain (Normalized)
IC Collector Current (mA) DC Current Gain VCE, Collector-Emitter Voltage (V)
IB Base Current (mA)
On Voltages
Voltage (V)
IC Collector Current (mA)
Page 4
10/04/06 V1.0
T2N4401
Low Power Bipolar Transistors
DC Current Gain hFE, DC Current Gain (Normalized)
IC Collector Current (mA)
Collector Saturation Region VCE, Collector-Emitter Voltage (V)
IB Base Current (mA)
Page 5
10/04/06 V1.0
T2N4401
Low Power Bipolar Transistors
On Voltages
Voltage (V)
IC Collector Current (mA)
Part Number Table
Package TO-92 Part Number 2N4401
Page 6
10/04/06 V1.0
T2N4401
Low Power Bipolar Transistors
Notes:
International Sales Offices:
AUSTRALIA - Farnell InOne
Tel No: ++ 61 2 9645 8888 Fax No: ++ 61 2 9644 7898
FINLAND - Farnell InOne
Tel No: ++ 358 9 560 7780 Fax No: ++ 358 9 345 5411
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Tel No: ++ 31 30 241 7373 Fax No: ++ 31 30 241 7333
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Tel No: ++ 41 1 204 64 64 Fax No: ++ 41 1 204 64 54
AUSTRIA - Farnell InOne
Tel No: ++ 43 662 2180 680 Fax No: ++ 43 662 2180 670
FRANCE - Farnell InOne
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GERMANY - Farnell InOne
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BRAZIL - Farnell-Newark InOne
Tel No: ++ 55 11 4066 9400 Fax No: ++ 55 11 4066 9410
HONG KONG - Farnell-Newark InOne Tel No: ++ 852 2268 9888
Fax No: ++ 852 2268 9899
PORTUGAL - Farnell InOne
Tel No: ++ 34 93 475 8804 Fax No: ++ 34 93 474 5288
UK - CPC
++ 44 8701 202 530 ++ 44 8701 202 531
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Tel No: ++86 10 6238 5152 Fax No: ++86 10 6238 5022
IRELAND - Farnell InOne
Tel No: ++ 353 1 830 9277 Fax No: ++ 353 1 830 9016
SINGAPORE -
Farnell-Newark InOne Tel No: ++ 65 6788 0200
export
EXPORT - Farnell InOne
Tel No: ++ 44 8701 200 208 Fax No: ++ 44 8701 200 209
Fax No: ++ 65 6788 0300
For enquiries from all other markets
DENMARK - Farnell InOne
Tel No: ++ 45 44 53 66 44 Fax No: ++ 45 44 53 66 06
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Tel No: ++ 39 02 93 995 200 Fax No: ++ 39 02 93 995 300
SPAIN - Farnell InOne
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http://www.farnellinone.com
ESTONIA - Farnell InOne
Tel No: ++ 358 9 560 7780 Fax No: ++ 358 9 345 5411
Farnell-Newark InOne Tel No: ++ 60 3 7873 8000 Fax No: ++ 60 3 7873 7000
MALAYSIA -
SWEDEN - Farnell InOne
Tel No: ++ 46 8 730 50 00 Fax No: ++ 46 8 83 52 62
http://www.buckhickmaninone.com http://www.cpc.co.uk
Disclaimer This data sheet and its contents (the "Information") belong to the Premier Farnell Group (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. (c) Premier Farnell plc 2004.
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10/04/06 V1.0


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